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西門(mén)康IGBTSKIIP613GD123-3DUL兩單元封裝,芯片使用SPT技術(shù),飽和壓降約為2.0伏左右,開(kāi)關(guān)損耗比NPT技術(shù)的IGBT模塊降低20%左右，西門(mén)康IGBTSKIIP613GD123-3DUL完全可以在逆變焊機(jī)中使用,西門(mén)康IGBTSKIIP613GD123-3DUL可以使用在315安到500安的電焊機(jī)中,.5千瓦以上的變頻器中等。
SKM300GB123D SKM400GB123D
SKM22GD123D SKM40GD123D
SKM40GDL123D SKM75GD123D
SKM75GD123DL SKM75GDL123D
SKM50GAL123D SKM75GAL123D
SKM100GAL123D SKM145GAL123D
SKM150GAL123D SKM200GAL123D
SKM300GAL123D SKM75GAR123D
SKM100GAR123D SKM200GAR123D
SKM300GAR123D SKM300GA123D
SKM400GA123D SKM500GA123D
SKM195GB126D SKM200GB126D
SKM300GB126D SKM400GB126D
SKM600GB126D SKM195GAL126D
SKM200GAL126D SKM400GAL126D
SKM600GAL126D SKM600GA126D
SKM800GA126D SKM75GB128D
SKM100GB128D SKM145GB128D
